{"id":970836,"date":"2026-06-04T16:11:35","date_gmt":"2026-06-04T20:11:35","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon\/"},"modified":"2026-06-04T16:11:35","modified_gmt":"2026-06-04T20:11:35","slug":"atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon\/","title":{"rendered":"Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon"},"content":{"rendered":"

<\/p>\n

Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon <\/b><\/p>\n

Novel approach addresses a critical performance barrier by reducing effects that limit high-frequency operation<\/i><\/p>\n

LOS GATOS, Calif.–(BUSINESS WIRE<\/a>)–
\nAtomera Incorporated (NASDAQ: ATOM), a semiconductor materials and technology licensing company, today announced a new approach to GaN-on-Silicon that addresses a key performance barrier limiting its use in mainstream RF applications. Today, high-performance RF GaN devices are typically built on silicon carbide substrates, which provide excellent performance but remain costly and difficult to scale. Silicon offers a lower-cost, more scalable foundation with the potential to support larger wafer sizes and greater compatibility with standard silicon manufacturing; however, GaN-on-Silicon has historically underperformed in RF applications due to parasitic channel losses that reduce efficiency, especially at high frequencies. Atomera\u2019s MST\u00ae<\/sup> technology reduces these losses, helping close the performance gap, and offers exceptional linearity, enabling lower-cost GaN solutions for 5G, future 6G, and other high-frequency RF devices.<\/p>\n

\n\u201cAtomera\u2019s latest GaN-on-Si devices show a substantial\u00a0reduction in parasitic interface charge, by more than an order of magnitude, and our RF characterization of the first MST-enabled samples confirms a significant reduction in RF losses,\u201d said Mostafa Emam, Founder & CEO at Incize. \u201cBeyond the small-signal improvements, the large-signal results are particularly compelling. The best-performing MST samples exhibit outstanding linearity and power handling. This linearity benefit extends into the high-power regime, approaching performance levels typically associated with advanced RF SOI technologies.\u00a0For GaN-on-Si, these results represent a very exciting step forward.\u201d<\/p>\n

\nAtomera\u2019s approach, MST, introduces a thin, oxygen-modified layer near the surface of the silicon wafer, creating a more favorable platform for GaN growth and making silicon a more viable foundation for high-performance RF devices. This controlled layer modifies the silicon lattice structure and helps block the diffusion of electrical dopants, improving crystal quality at the GaN\/silicon interface.<\/p>\n

\n\u201cWe\u2019re fundamentally changing the economics of GaN. Atomera\u2019s MST is removing barriers to GaN-on-Silicon-based RF systems, unlocking breakthrough RF performance on low-cost silicon substrates,\u201d said Scott Bibaud, president and CEO of Atomera. \u201cSuccessfully overcoming challenges like the parasitic channel positions Atomera to achieve a competitive advantage in GaN-on-Silicon, which we believe will provide growth opportunities for Atomera in advanced RF and power electronics.\u201d\u00a0<\/p>\n

\nIn Atomera\u2019s testing, MST enabled more than a 10x reduction in parasitic channel charge, reducing a key mechanism of RF power loss and supporting improved high-frequency GaN device performance. Furthermore, the test data has proven that MST will allow devices to handle significant power while maintaining signal quality, or linearity, under stress.<\/p>\n

\n\u201cWe are delighted by the recent RF test data from Incize,\u201d said Robert Mears, Founder & CTO of Atomera. \u201cLinearity is a top care-about for RF designers, and the new data shows MST GaN-on-Silicon achieving both the ultra-low RF losses and linearity metrics of advanced trap-rich RF SOI. At the benchmark input power of 30mW, the linearity is exceptional, 1000x better than the GaN-on-silicon reference wafer. The MST benefit extends all the way to 10W input power.\u201d<\/p>\n

\nExplore our white paper<\/a> to learn more.\u00a0<\/p>\n

About\u00a0Atomera<\/b><\/p>\n

\nAtomera Incorporated\u00a0(NASDAQ: ATOM) is a semiconductor materials and technology licensing company focused on deploying its proprietary performance-enhancing technology into the semiconductor industry.\u00a0Atomera\u00a0has developed Mears Silicon Technology\u2122, or MST\u00ae<\/sup>, a quantum-engineered thin-film technology that increases performance and power efficiency in semiconductor transistors. MST can be implemented using equipment already deployed in semiconductor manufacturing facilities and is complementary to other nano-scaling technologies in the semiconductor industry roadmap. More information can be found at\u00a0www.atomera.com<\/b><\/a>.<\/p>\n

\"\"<\/p>\n

View source version on businesswire.com: <\/span>https:\/\/www.businesswire.com\/news\/home\/20260604075701\/en\/<\/a><\/span><\/p>\n

Atomera Contact
\n<\/b>
Rachel Yang
\n
The Hoffman Agency
\n
t: (360) 910-5860
\n
rachely@hoffman.com<\/a><\/p>\n

KEYWORDS:<\/b> California United States North America<\/p>\n

INDUSTRY KEYWORDS:<\/b> Semiconductor Engineering Technology Manufacturing 5G Hardware<\/p>\n

MEDIA:<\/b><\/p>\n\n\n\n\n
Logo<\/b><\/font><\/td>\n<\/tr>\n
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Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon Novel approach addresses a critical performance barrier by reducing effects that limit high-frequency operation LOS GATOS, Calif.–(BUSINESS WIRE)– Atomera Incorporated (NASDAQ: ATOM), a semiconductor materials and technology licensing company, today announced a new approach to GaN-on-Silicon that addresses a key performance barrier limiting its use in mainstream RF applications. Today, high-performance RF GaN devices are typically built on silicon carbide substrates, which provide excellent performance but remain costly and difficult to scale. Silicon offers a lower-cost, more scalable foundation with the potential to support larger wafer sizes and greater compatibility with standard silicon manufacturing; however, GaN-on-Silicon has historically underperformed in RF applications due to parasitic channel losses that reduce efficiency, especially at … <\/p>\n

Continue reading “Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon”<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[],"tags":[],"class_list":["post-970836","post","type-post","status-publish","format-standard","hentry"],"yoast_head":"\nAtomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon - Market Newsdesk<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.marketnewsdesk.com\/index.php\/atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon - Market Newsdesk\" \/>\n<meta property=\"og:description\" content=\"Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon Novel approach addresses a critical performance barrier by reducing effects that limit high-frequency operation LOS GATOS, Calif.–(BUSINESS WIRE)– Atomera Incorporated (NASDAQ: ATOM), a semiconductor materials and technology licensing company, today announced a new approach to GaN-on-Silicon that addresses a key performance barrier limiting its use in mainstream RF applications. Today, high-performance RF GaN devices are typically built on silicon carbide substrates, which provide excellent performance but remain costly and difficult to scale. Silicon offers a lower-cost, more scalable foundation with the potential to support larger wafer sizes and greater compatibility with standard silicon manufacturing; however, GaN-on-Silicon has historically underperformed in RF applications due to parasitic channel losses that reduce efficiency, especially at … Continue reading "Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon"\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.marketnewsdesk.com\/index.php\/atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon\/\" \/>\n<meta property=\"og:site_name\" content=\"Market Newsdesk\" \/>\n<meta property=\"article:published_time\" content=\"2026-06-04T20:11:35+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&sty=20260604075701r1&sid=flmnd&distro=nx&lang=en\" \/>\n<meta name=\"author\" content=\"Newsdesk\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Newsdesk\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"3 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon\\\/\"},\"author\":{\"name\":\"Newsdesk\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/#\\\/schema\\\/person\\\/482f27a394d4fda80ecb5499e519d979\"},\"headline\":\"Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon\",\"datePublished\":\"2026-06-04T20:11:35+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon\\\/\"},\"wordCount\":635,\"image\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/cts.businesswire.com\\\/ct\\\/CT?id=bwnews&sty=20260604075701r1&sid=flmnd&distro=nx&lang=en\",\"inLanguage\":\"en-US\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon\\\/\",\"url\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/atomera-breakthrough-targets-broader-rf-adoption-of-gan-on-silicon\\\/\",\"name\":\"Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon - 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