{"id":966736,"date":"2026-05-26T08:06:03","date_gmt":"2026-05-26T12:06:03","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/microchip-launches-3-3-kv-hv-d3-msic-power-modules-to-enable-solid-state-transformers-for-ai-data-centers\/"},"modified":"2026-05-26T08:06:03","modified_gmt":"2026-05-26T12:06:03","slug":"microchip-launches-3-3-kv-hv-d3-msic-power-modules-to-enable-solid-state-transformers-for-ai-data-centers","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/microchip-launches-3-3-kv-hv-d3-msic-power-modules-to-enable-solid-state-transformers-for-ai-data-centers\/","title":{"rendered":"Microchip Launches 3.3 kV HV\u2011D3 mSiC\u00ae Power Modules to Enable Solid-State Transformers for AI Data Centers"},"content":{"rendered":"

\nNew silicon carbide modules deliver the required thermal performance and efficiency for SSTs to increase power available for token generation
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CHANDLER, Ariz., May 26, 2026 (GLOBE NEWSWIRE) — Microchip Technology\u00a0(Nasdaq: MCHP)<\/strong> today announces the availability of its new 3.3 kV HV<\/u><\/strong>\u2011<\/u><\/strong>D3 mSiC\u00ae<\/sup> Power Modules<\/u><\/strong><\/a>, designed to simplify and accelerate the adoption of solid-state transformers (SSTs) in AI hyperscale data centers and other high\u2011voltage power applications. The new modules integrate 3.3 kV silicon carbide (SiC) mSiC\u00ae<\/sup> MOSFETs and Schottky diodes in an industry\u2011standard 62 mm package, enabling efficient power delivery from the medium\u2011voltage grid directly to the server rack.<\/p>\n

As AI data centers continue to scale, token generation is limited by power availability, while efficiency is a defining factor for return on investment. Traditional architectures based on bulky, low\u2011frequency transformers add complexity, increase losses and limit flexibility. Solid-state transformers<\/u><\/strong><\/a> represent a foundational shift in power delivery, reducing conversion stages and enabling higher system efficiency. The industry’s shift toward higher-voltage DC rack distribution in next-generation AI facilities further amplifies the value of SSTs, which are intended to deliver regulated DC directly from the medium-voltage grid with fewer conversion stages.<\/p>\n

Microchip\u2019s HV\u2011D3 mSiC modules are engineered specifically to meet these requirements. The modules use Microchip\u2019s mSiC MOSFET technology, which offers highly competitive RDS(on) <\/sub>stability over temperature, with packaging that supports 6 kV isolation, incorporates CTI 600\u2011rated materials and features extended creepage distances, designed to allow safe series connection for high\u2011voltage operation. A silicon nitride (Si\u2083N\u2084) substrate delivers enhanced thermal conductivity and power\u2011cycling capability, helping designers achieve higher power density with less aggressive cooling.<\/p>\n

\u201cAs AI datacenters continue to push limits in supplying power from the grid to the GPU, the need for solid-state transformers becomes increasingly important,\u201d said Clayton Pillion, vice president of Microchip\u2019s high-power solutions business unit. \u201cOur 3.3 kV HV-D3 mSiC power modules enable designers to reduce the number of series connected devices by roughly half versus lower-voltage SiC alternatives when interfacing to 13.8 kV or 34.5 kV grids. The devices also address a key gap in the industrial market for 100\u2013300A products, bridging discrete SiC devices and much larger power modules.\u201d<\/p>\n

The HV\u2011D3 mSiC power modules are available in half\u2011bridge and common\u2011source configurations, with and without anti\u2011parallel Schottky diodes, addressing applications in the 100-300A range. Microchip\u2019s mSiC MOSFET technology, offers balanced switching losses for both hard\u2011switched and soft\u2011switched topologies, making the devices well suited for SST designs and other high\u2011frequency, high\u2011voltage systems.<\/p>\n

While optimized for solid-state transformers in AI data centers, the HV\u2011D3 mSiC power modules also address a wide range of applications, including megawatt charging infrastructure for heavy\u2011duty vehicles, auxiliary power supplies for rail\/heavy transportation, medium\u2011voltage motor drives, industrial and defense power systems. These markets benefit from the same combination of high isolation, thermal robustness, and efficient power conversion.<\/p>\n

Microchip has over 20 years of experience in the development, design, manufacturing and support of SiC devices and power solutions, to help customers adopt SiC with ease, speed and confidence. The company\u2019s mSiC products and solutions are designed to provide lower system cost, faster time to market and lower risk. Microchip offers a broad and flexible portfolio of SiC diodes, MOSFETs and gate drivers. For more information, visit www.microchip.com\/sic<\/u><\/strong><\/a>.<\/p>\n

\n Development Tools<\/strong>\n <\/p>\n

The 3.3 kV power modules are supported by an application note, design guide, device and simulation models<\/u><\/strong><\/a> for rapid prototyping. Additionally, Microchip provides global technical support, design services and field application engineering support.<\/p>\n

\n Pricing and Availability<\/strong>\n <\/p>\n

The 3.3 kV mSiC power modules are available to purchase in production quantities. You can purchase<\/u><\/strong><\/a>\u00a0directly from Microchip or contact a Microchip sales representative or authorized worldwide distributor<\/u><\/strong><\/a>.<\/p>\n

\n Resources<\/strong>\n <\/p>\n

High-res images available through Flickr or editorial contact (feel free to publish):<\/p>\n