{"id":911128,"date":"2025-11-18T06:13:54","date_gmt":"2025-11-18T11:13:54","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/everspin-expands-persyst-mram-family-with-high-reliability-devices-for-aerospace-defense-automotive-and-industrial-applications\/"},"modified":"2025-11-18T06:13:54","modified_gmt":"2025-11-18T11:13:54","slug":"everspin-expands-persyst-mram-family-with-high-reliability-devices-for-aerospace-defense-automotive-and-industrial-applications","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/everspin-expands-persyst-mram-family-with-high-reliability-devices-for-aerospace-defense-automotive-and-industrial-applications\/","title":{"rendered":"Everspin Expands PERSYST MRAM Family With High-Reliability Devices for Aerospace, Defense, Automotive and Industrial Applications"},"content":{"rendered":"

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Everspin Expands PERSYST<\/i> MRAM Family With High-Reliability Devices for Aerospace, Defense, Automotive and Industrial Applications<\/b><\/p>\n

New AEC-Q100 Grade 1 MRAM Delivers 10-Year Data Retention at 125\u00b0C, 48-Hour Burn-In, and Unlimited Endurance for Mission-Critical Systems<\/i><\/p>\n

CHANDLER, Ariz.–(BUSINESS WIRE<\/a>)–
\nEverspin Technologies, Inc. (NASDAQ: MRAM), the world\u2019s leading developer and manufacturer of persistent Magnetoresistive Random Access Memory (MRAM) solutions, today announced its newest high-reliability additions to the PERSYST <\/i>MRAM product line: the EM064LX HR and EM128LX HR devices. Designed for extreme operating environments, these new xSPI MRAM products deliver the industry\u2019s most robust combination of endurance, temperature performance and data retention for aerospace, defense, automotive and high-end industrial applications.<\/p>\n

\nThese newest additions extend Everspin\u2019s leadership in non-volatile memory by delivering AEC-Q100 Grade 1 qualification for operation from -40\u00b0C to +125\u00b0C. Each device undergoes a 48-hour burn-in process and provides 10-year data retention at 125\u00b0C, ensuring predictable performance even under the most demanding conditions. With 64- and 128-megabit densities achieving 90 Mbytes\/sec read and write bandwidth, sustained for over a decade, the EM064LX HR and EM128LX HR are built for systems that cannot risk data loss or degradation.<\/p>\n

\nThe EM064LX device underwent independent radiation testing at the Berkeley Accelerator Space Effects (BASE) Facility at Lawrence Berkeley National Laboratory under a NASA Jet Propulsion Laboratory program. The tests validated the device\u2019s high-reliability characteristics, showing no single-event latch-up (SEL) events up to an LET of 61 MeV-cm\u00b2\/mg at ambient temperature. The EM064LX HR and EM128LX HR share the same design architecture and high-reliability specifications, supporting consistent performance across both devices.<\/p>\n

\n\u201cOur customers design systems that must perform without compromise in the harshest environments,\u201d says Sanjeev Aggarwal, President and CEO of Everspin Technologies. \u201cEM064LX and EM128LX family of products offer the most reliable and durable non-volatile memory where density and total bandwidth are key requirements. These solutions demonstrate Everspin\u2019s ongoing commitment to supporting mission-critical designs that rely on memory performance and reliability under extreme conditions.\u201d<\/p>\n

\nThe new solutions feature a Quad Serial Peripheral Interface (QSPI) supporting 133 MHz single transfer rate and 90 MHz dual transfer rate operation, delivering high bandwidth for data-intensive applications while maintaining the deterministic performance MRAM is known for. These capabilities make the EM064LX HR and EM128LX HR family of products ideal for systems requiring secure, persistent memory where bandwidth and reliability are equally important.<\/p>\n

Key Benefits of Everspin\u2019s <\/strong>PERSYST<\/b><\/i> EMxxLX High-Reliability MRAM:<\/strong><\/p>\n