{"id":867813,"date":"2025-07-09T08:20:12","date_gmt":"2025-07-09T12:20:12","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/incize-and-atomera-announce-strategic-collaboration-to-advance-gan-on-si-technologyfor-next-gen-rf-and-power-devices\/"},"modified":"2025-07-09T08:20:12","modified_gmt":"2025-07-09T12:20:12","slug":"incize-and-atomera-announce-strategic-collaboration-to-advance-gan-on-si-technologyfor-next-gen-rf-and-power-devices","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/incize-and-atomera-announce-strategic-collaboration-to-advance-gan-on-si-technologyfor-next-gen-rf-and-power-devices\/","title":{"rendered":"Incize and Atomera Announce Strategic Collaboration to Advance GaN-on-Si Technologyfor Next-Gen RF and Power Devices"},"content":{"rendered":"

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Incize and Atomera Announce Strategic Collaboration to Advance GaN-on-Si Technology<\/b>for Next-Gen RF and Power Devices<\/b><\/p>\n

LOUVAIN-LA-NEUVE, Belgium & LOS GATOS, Calif.–(BUSINESS WIRE<\/a>)–Incize<\/i>, a Belgian cutting-edge semiconductor characterization and modeling company, and Atomera <\/i>(Nasdaq: ATOM), a pioneer in advanced semiconductor materials, today announced a strategic collaboration to enhance Gallium Nitride on Silicon (GaN-on-Si) technologies.<\/p>\n

This press release features multimedia. View the full release here: https:\/\/www.businesswire.com\/news\/home\/20250709351477\/en\/<\/a><\/p>\n

\nIn certain applications, traditional silicon is hitting its performance ceiling. GaN-on-Si offers a scalable, cost-effective alternative by taking advantage of GaN\u2019s performance with silicon\u2019s manufacturability. Combining Atomera\u2019s Mears Silicon Technology\u2122 (MST\u00ae) with Incize\u2019s advanced characterization should accelerate the path to volume production of next-generation RF and power devices.<\/p>\n

\nThis partnership brings together Atomera\u2019s proprietary MST\u00ae \u2014 a quantum-engineered, ultra-thin silicon film that improves transistor performance, energy efficiency and reliability \u2014 with Incize\u2019s state-of-the-art characterization platforms, covering substrate trap analysis, noise, linearity, thermal effects and RF performance from DC to mmWave.<\/p>\n

\nThe joint program will concentrate on optimizing GaN-on-Si device performance for high-frequency and high-power applications, with target markets in wireless infrastructure (5G\/6G), satellite communications and advanced power electronics.<\/p>\n

\n\u201cWe are thoroughly delighted to collaborate with Atomera, whose MST\u00ae technology has already demonstrated promising advantages in silicon-based devices,\u201d said Dr. Mostafa Emam, CEO of Incize. \u201cBy leveraging our advanced RF technology enablement capabilities and applying them to Atomera\u2019s innovation, we aim to unlock new frontiers of performance, efficiency and reliability in GaN-on-Si platforms.\u201d<\/p>\n

\n\u201cIncize\u2019s track record with GaN-on-Si and their superb measurement and modeling capabilities make them an ideal partner,\u201d said Scott Bibaud, CEO of Atomera. \u201cTogether, we are exploring how MST\u00ae can be harnessed to propel compound semiconductor devices forward and deliver truly groundbreaking solutions to our customers.\u201d<\/p>\n

\n\u201cIt is most gratifying to see MST\u00ae being explored beyond conventional silicon,\u201d added Dr. Robert Mears, founder and CTO of Atomera. \u201cGaN-on-Si is a fascinating and rapidly evolving field, and Incize\u2019s in-depth understanding of RF device physics and their world-class measurement capability provide an excellent opportunity to investigate how MST\u00ae can contribute to advancing this important technology.\u201d<\/p>\n

\nThe collaboration will explore the integration of MST\u00ae into GaN-on-Si device structures, using Incize\u2019s proprietary measurement techniques to evaluate:<\/p>\n