{"id":863128,"date":"2025-06-24T09:34:17","date_gmt":"2025-06-24T13:34:17","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/vremt-presents-navitas-with-outstanding-technical-collaboration-award\/"},"modified":"2025-06-24T09:34:17","modified_gmt":"2025-06-24T13:34:17","slug":"vremt-presents-navitas-with-outstanding-technical-collaboration-award","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/vremt-presents-navitas-with-outstanding-technical-collaboration-award\/","title":{"rendered":"VREMT Presents Navitas with \u2018Outstanding Technical Collaboration Award\u2019"},"content":{"rendered":"

\nNavitas recognized for developing and delivering next-gen GaN and SiC technologies to support major automotive OEMs, including Volvo, ZEEKR, and SMART
\n<\/h2>\n
\n

TORRANCE, Calif., June 24, 2025 (GLOBE NEWSWIRE) — Navitas Semiconductor<\/u><\/a> (Nasdaq: NVTS), the industry leader in next-generation GaNFast\u2122 gallium nitride (GaN) and GeneSiC\u2122 silicon carbide (SiC) power semiconductors, has been awarded the \u2018Outstanding Technical Collaboration Award\u2019 from VREMT Energy, a subsidiary of Geely, which specializes in new energy vehicle power batteries, electric drive systems, charging systems and energy storage systems.<\/p>\n

VREMT and Navitas opened a joint R&D Laboratory<\/a> to accelerate EV power-system developments using Navitas\u2019 GaNFast power ICs and GeneSiC power MOSFETs, driving technical breakthroughs and facilitating the rapid deployment of high-voltage EV systems. GaN and SiC technologies enable improved efficiency, weight, and size, critical for EV on-board chargers (OBCs) and DC-DC converters to deliver faster charging, longer range, and greater system efficiency for electric vehicles.<\/p>\n

Navitas recently introduced the industry\u2019s first automotive \u2018AEC-Plus\u2019 qualified SiC MOSFETs<\/a> in HV-T2PaK top-side cooled package, which offers a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. The latest generation of 650 V and 1200 V \u2018trench-assisted planar\u2019 SiC MOSFETs combined with an optimized, HV-T2PaK top-side cooled package, delivers the industry\u2019s highest creepage of 6.45 mm to meet IEC-compliance for applications up to 1200V.<\/p>\n

In April 2025, automotive grade GaNSafe\u2122 ICs<\/a> were introduced achieving AEC-Q100 and AEC-Q101 qualifications, showcasing GaN\u2019s next inflection into the automotive market. The GaNSafe\u00a04th<\/sup>\u00a0generation family integrates control, drive, sensing, and critical protection features, enabling unprecedented reliability and robustness in high-power applications. It is the world\u2019s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4 pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC<\/sub>\u00a0pin.<\/p>\n

\u201cThis award is a testament to Navitas\u2019 technology leadership and commitment to the EV industry,\u201d said Charles Zha, Navitas SVP and GM of APAC. \u201cWe are proud that partnering with VREMT \u2014 the leading global EV power solutions provider, our GaN and SiC solutions can empower ZEEKR, Volvo, and SMART and potentially more next-generation EV makers worldwide. Our unwavering commitment to \u2018Electrify Our World\u2019 will continue to drive innovation and collaboration as we lead the clean energy revolution in transportation and beyond.\u201d<\/p>\n

\n About Navitas<\/strong>
\n
\n Navitas Semiconductor<\/a>\u00a0(Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating\u00a010 years<\/a>\u00a0of power innovation, founded in 2014.\u00a0GaNFast\u2122 power ICs<\/a>\u00a0integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary\u00a0GeneSiC\u2122 power<\/a>\u00a0devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance \/ industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry\u2019s first and only\u00a020-year GaNFast warranty<\/a>. Navitas was the world\u2019s first semiconductor company to be\u00a0CarbonNeutral\u00ae-certified<\/a>. <\/p>\n

\n Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.<\/em>
\n \n <\/p>\n

\n Contact Information<\/strong>
\n
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com<\/a><\/p>\n

A photo accompanying this announcement is available at https:\/\/www.globenewswire.com\/NewsRoom\/AttachmentNg\/9e7df9c9-07f3-40f0-b77a-97f577e429e0<\/a><\/p>\n

\"\"
\n
\n \"\"\n <\/div>\n

<\/div>\n","protected":false},"excerpt":{"rendered":"

Navitas recognized for developing and delivering next-gen GaN and SiC technologies to support major automotive OEMs, including Volvo, ZEEKR, and SMART TORRANCE, Calif., June 24, 2025 (GLOBE NEWSWIRE) — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast\u2122 gallium nitride (GaN) and GeneSiC\u2122 silicon carbide (SiC) power semiconductors, has been awarded the \u2018Outstanding Technical Collaboration Award\u2019 from VREMT Energy, a subsidiary of Geely, which specializes in new energy vehicle power batteries, electric drive systems, charging systems and energy storage systems. VREMT and Navitas opened a joint R&D Laboratory to accelerate EV power-system developments using Navitas\u2019 GaNFast power ICs and GeneSiC power MOSFETs, driving technical breakthroughs and facilitating the rapid deployment of high-voltage EV systems. GaN and SiC technologies enable … <\/p>\n

Continue reading “VREMT Presents Navitas with \u2018Outstanding Technical Collaboration Award\u2019”<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[],"tags":[],"class_list":["post-863128","post","type-post","status-publish","format-standard","hentry"],"yoast_head":"\nVREMT Presents Navitas with \u2018Outstanding Technical Collaboration Award\u2019 - Market Newsdesk<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.marketnewsdesk.com\/index.php\/vremt-presents-navitas-with-outstanding-technical-collaboration-award\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"VREMT Presents Navitas with \u2018Outstanding Technical Collaboration Award\u2019 - Market Newsdesk\" \/>\n<meta property=\"og:description\" content=\"Navitas recognized for developing and delivering next-gen GaN and SiC technologies to support major automotive OEMs, including Volvo, ZEEKR, and SMART TORRANCE, Calif., June 24, 2025 (GLOBE NEWSWIRE) — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast\u2122 gallium nitride (GaN) and GeneSiC\u2122 silicon carbide (SiC) power semiconductors, has been awarded the \u2018Outstanding Technical Collaboration Award\u2019 from VREMT Energy, a subsidiary of Geely, which specializes in new energy vehicle power batteries, electric drive systems, charging systems and energy storage systems. 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