{"id":816235,"date":"2025-02-21T08:35:01","date_gmt":"2025-02-21T13:35:01","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\/"},"modified":"2025-02-21T08:35:01","modified_gmt":"2025-02-21T13:35:01","slug":"navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\/","title":{"rendered":"Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025"},"content":{"rendered":"<div class=\"mw_release\">\n<p align=\"left\">TORRANCE, Calif., Feb.  21, 2025  (GLOBE NEWSWIRE) &#8212; <a href=\"https:\/\/www.globenewswire.com\/Tracker?data=iRDaocHA-R7AQEOQgZ1JnbqDnKYx0ke4fic_cWilQbfMQ1ZreN14fHeszogxm8Z6O2s_C41xsvoX-KUCpN1v1vV-5yNhy1Ansvy0RQojz0g=\" rel=\"nofollow\" target=\"_blank\">Navitas Semiconductor<\/a> (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will attend <a href=\"https:\/\/www.globenewswire.com\/Tracker?data=qLirqcd2Esodef5n6q6Vv_zGUj3BsOiTitYylf5gt1_vSl4D1DfbcPSYp3EIhIeBv1WrlFjVVcGoTTa0pUBSfg==\" rel=\"nofollow\" target=\"_blank\">APEC 2025<\/a> and highlight the latest advances in GaN and SiC wide bandgap technologies for AI data center EV, and mobile applications. Additionally, Navitas will highlight its latest \u2018paradigm in power conversion\u2019, <a href=\"https:\/\/www.globenewswire.com\/Tracker?data=eks5L5bsWBL7AVUrMJ5GKHtvopyvJKBQpcDTIsGJ_UgK1nqBve_zGJj7micnYoFzcmZUP7tF8yz37e-jryn18hZhbN3GVpEkFwKuM7MrX0MH10_S1pBRukMB9_nQtHpVMeZV9CeH9_NE7VQQe78WsZTKAG7wgeDPgY0kU2OV9d7L_g9cYLalFbfQimGRY95v\" rel=\"nofollow\" target=\"_blank\">unveiled in a live-streamed press event<\/a> on the 12th of March.<\/p>\n<p>APEC takes place at Atlanta&#8217;s Georgia World Congress Center from March 16<sup>th<\/sup> to 20<sup>th<\/sup>. The company&#8217;s \u201cPlanet Navitas\u201d stand (Booth #1107) will showcase the company\u2019s mission to \u2018Electrify our World\u2122\u2019 by advancing the transition from legacy silicon to next-generation, clean energy GaN and SiC power semiconductors. These technologies are designed for high-growth markets that demand the highest efficiency and power density. The shift from silicon to GaN and SiC technologies has the potential to save over 6,000 megatons of CO<sub>2<\/sub> per year by 2050. Recent Navitas breakthroughs that will be highlighted on the stand include:<\/p>\n<ul type=\"disc\">\n<li>Navitas\u2019 breakthrough that will create a paradigm shift in power conversion \u2013 full details will be <a href=\"https:\/\/navitassemi.com\/navitas-to-unveil-a-new-paradigm-in-power\/\" rel=\"nofollow\" target=\"_blank\">unveiled in a live-streamed press event<\/a> on the 12th of March.<\/li>\n<\/ul>\n<ul type=\"disc\">\n<li>\n          <a href=\"https:\/\/navitassemi.com\/navitas-presents-worlds-first-8-5kw-ai-data-center-power-supply-powered-by-gan-and-sic\/\" rel=\"nofollow\" target=\"_blank\">World\u2019s First 8.5 kW AI Data Center Power Supply<\/a>:\u00a0See the world\u2019s first 8.5 kW OCP power solution achieving 98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe\u2122 power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.<\/li>\n<\/ul>\n<ul type=\"disc\">\n<li>\n          <a href=\"https:\/\/navitassemi.com\/navitas-overcomes-ai-challenges-with-worlds-highest-power-density-data-center-design\/\" rel=\"nofollow\" target=\"_blank\">World\u2019s Highest Power Density AI Power Supply<\/a>:\u00a0Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world\u2019s highest power density with 137 W\/in<sup>3<\/sup>\u00a0and over 97% efficiency.<\/li>\n<\/ul>\n<ul type=\"disc\">\n<li>\u2018<a href=\"https:\/\/navitassemi.com\/navitas-new-intelliweave-control-technique-powers-next-gen-ai-data-centers-above-99-efficiency\/\" rel=\"nofollow\" target=\"_blank\">IntelliWeave\u2019 Patented Digital Control<\/a>\u00a0Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe\u2122 and Gen-3 \u2018Fast\u2019 SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared to existing solutions.<\/li>\n<\/ul>\n<ul type=\"disc\">\n<li>Mid-voltage GaNFast FETs targeting 48V AI data center power supplies, next-generation EV platforms EV and AI-based robotics, to enable high-frequency, high-efficiency, and high-power density power conversion systems.<\/li>\n<\/ul>\n<ul type=\"disc\">\n<li>\n          <a href=\"https:\/\/navitassemi.com\/navitas-ganslim-power-ics-drive-ease-of-use-system-cost-and-energy-savings-in-mobile-consumer-and-home-appliance\/\" rel=\"nofollow\" target=\"_blank\">GaNSlim<\/a>\u2122: Simple. Fast. Integrated:\u00a0A new generation of highly integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.<\/li>\n<\/ul>\n<ul type=\"disc\">\n<li>\n          <a href=\"https:\/\/navitassemi.com\/navitas-qualifies-leading-edge-gen-3-fast-sic-to-auto-grade-q101\/\" rel=\"nofollow\" target=\"_blank\">Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs<\/a>\u00a0with \u2018trench-assisted planar\u2019 technology:\u00a0Enabled by over 20 years of SiC innovation leadership, GeneSiC\u2122 technology leads on performance with the Gen-3 \u2018Fast\u2019 SiC MOSFETs with \u2018trench-assisted planar\u2019 technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.<\/li>\n<\/ul>\n<ul type=\"disc\">\n<li>SiCPAK\u2122 High-Power Modules \u2013 Built for Endurance and Performance:\u00a0Utilizing industry-leading \u2018trench-assisted planar\u2019-gate technology and epoxy-resin potting for increased power cycling and long-lasting reliability, SiCPAK modules offer compact form factors and provide cost-effective, power-dense solutions for applications including EV charging, drives, solar, and energy storage systems (ESS).<\/li>\n<\/ul>\n<ul type=\"disc\">\n<li>New Advancements in our Leading GaNFast &amp; GeneSiC technology:\n<ul>\n<li>GeneSiC MOSFETs specifically optimized for EV traction modules with additional screening and gold metallization for sintering.<\/li>\n<li>GaNSense\u2122 motor drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhancing performance and robustness beyond what is achievable by any discrete GaN or discrete silicon device.\u00a0<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>Navitas will participate and present in the <a href=\"https:\/\/www.globenewswire.com\/Tracker?data=9zzKqg5YC6xmbNcSXBHrRCix9hLIqO9cQglR1DzLnnKWaiPDwKxJy7cflWI3DYl10ECE2XOpubMU2lWj9CyW0zTypNIUCU_HTOqPXYi3HTfAvbdWe4QH5qq-_LAL1l-fznNCn-zPXkj7RTp1hgQVgw==\" rel=\"nofollow\" target=\"_blank\">Industry Session<\/a> which showcases the latest work in all areas of power electronics.\u00a0<\/p>\n<p>\n        <strong><br \/>\n          <em>Technical Presentations:<\/em><br \/>\n        <\/strong><br \/>\n        <br \/>Wednesday 19<sup>th<\/sup> March<\/p>\n<ul type=\"disc\">\n<li>\u2018GaNSlim Power IC &amp; DPAK-4L Package Enables 100W, 100cc, PD3.1 Continuous Power Solution with 95% Efficiency\u2019\n<ul type=\"circle\">\n<li>2:20 pm, IS14.3, A411, Tom Ribarich, Sr Dir. Strategic Marketing<\/li>\n<\/ul>\n<\/li>\n<li>\u2018500kHz Inverter Design Using Bidirectional GaN Switches\u2019\n<ul type=\"circle\">\n<li>8:30 am, IS11.1, A403, Jason Zhang, VP Applications &amp; Technical Marketing<\/li>\n<\/ul>\n<\/li>\n<li>\u2018Advancing Power Solutions: Integrating Wide Bandgap Technologies for Next-Generation Applications\u2019\n<ul type=\"circle\">\n<li>1:30 pm \u2013 4:55 pm\u00a0ET, IS14, Llew Vaughan-Edmunds, Session Chair.<\/li>\n<\/ul>\n<\/li>\n<li>\u2018WBG Converter Design\u2019\n<ul type=\"circle\">\n<li>8:30 am \u2013 11:55 am\u00a0ET, IS11.1, Jason Zhang, Session Chair.<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>Thursday 20<sup>th<\/sup> March<\/p>\n<ul type=\"disc\">\n<li>\u2018Marketing &amp; Technology Trends in Power Electronics\u2019\n<ul type=\"circle\">\n<li>10:10 AM \u2013 11:50 AM\u00a0ET, Stephen Oliver, Session Chair.<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>To schedule a customer meeting with Navitas, please <a href=\"https:\/\/www.globenewswire.com\/Tracker?data=RUEXJiHXWQGp561wfeQ9TGp2dA6kQ8j--A37sfc3xZKx_obR_nLTW2hQOrnWISj14OVshzBIkhUz3-PPKIDhOgC4rIX53_IuoZuvvqwZiahgtHdjZ21r-2fCtx5AQyUrAupwU3_ak_mvNGQyfesmcmzlpDarbr8N6AJAwoOV14g6d2tRpv2jI5T3-we-qFNMbE9aczzKplnai6hASQE2_UOvhFSu3QsvclLgdp-_HXxAANJOIoaxaIivuTSaLHidL-Kwin_ARA7WqL5wwGIUfHlxBMeWNxc3XSlUnS_IcSiESYjZeyjBbYGdw1dcPzZxzSYq7UdfRe_AggaSeNtNJbyNN60KY-0HKVU1IlHqncAiVdt-vYvwiO02VCt-Cf8qAcFF3CCWRu1T5y5Cbs0ApIFnA3oDVSD5A0k8QtghqwUa5x6DHqQBwt5V-uDhqnEPqAZpbB6rPBx994DQnp7EVrDqonTPFG90rSXBWJhogQ8guIGSrJHIMlrBWfhT42HTIrfxPSwV7WmU1CJ70zk-Fk_OTVj3sFFoSy_4qIWddM16izdoZzwCowR1mi9z6Zp21cCw62-MZD09bTUlGePsucKklOCWke-lV_D_qeEWLj7xI0zojPTBTxhfxpR_70rRit4_smtXbmPNwLhMguZQirgxOqb754zbPnO-BupyFCruacC8SQPxsPxq8_im9ONA\" rel=\"nofollow\" target=\"_blank\">inquire here<\/a>. <br \/>To schedule a press meeting, please book <a href=\"https:\/\/www.globenewswire.com\/Tracker?data=MUTGRvK-gydtYWBOhKi4K0ifKpo-tWJ6jpusxh5W68H7RS7vjEaB0pGKMLfVF3on5at4skmuv6IBoWl5WOGYWSp7pSD7QfXmIsQ4l29P_ord7t0ykAEwmCnwJZ17ecnXnDA214dp-hhrKrjO7F3Gkw==\" rel=\"nofollow\" target=\"_blank\">here<\/a> (via Calendly)<br \/>To schedule an IR meeting, please book <a href=\"https:\/\/www.globenewswire.com\/Tracker?data=MUTGRvK-gydtYWBOhKi4KzzP2noX4cSs-Q4BnLV9z7-cd2T9Ft67fnVZLvi9TBGTkq2epAsJj1Wu6CTlmKtwX2A5MVqhl1GZJsAMxJFAkos_mIv8Xd1AytAf-CuG5-M4nmU3NiTDVLdR_r2bcZGXNB4nUslypUpZ2YxvJrAI0v4=\" rel=\"nofollow\" target=\"_blank\">here<\/a> (via Calendly)<\/p>\n<p>\n        <strong>About Navitas<\/strong><br \/>\n        <br \/>\n        <a href=\"https:\/\/www.globenewswire.com\/Tracker?data=iRDaocHA-R7AQEOQgZ1JnbqDnKYx0ke4fic_cWilQbf9u32RxiRZM1gxZ-P3T4WWynWcNM0phm6np6WdJPnR-4vLeyeG99LMqvJadWG40RY=\" rel=\"nofollow\" target=\"_blank\">Navitas Semiconductor<\/a>\u00a0(Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating\u00a0<a href=\"https:\/\/www.globenewswire.com\/Tracker?data=3MTFnTK08qdFsxyARSyknKSzvvlDmJQKysoCMHg0aRHliD7urQQ6XDfBduScI3TPhty8j2qGw2L3cvuN0qDWvo5Ud4lWt0J13PLz794jEhM=\" rel=\"nofollow\" target=\"_blank\">10 years<\/a>\u00a0of power innovation founded in 2014.\u00a0<a href=\"https:\/\/www.globenewswire.com\/Tracker?data=kfQOAQRA1faLTRrRoPsUV9CJjosJwm-y3aofZIMGk7aAE1mE5bp3a1S--8cNWeLFEJRh3Surf7VAnpkDjPK00oJY81UxyMsIUWWGuhpW-3yxvKEAqVrwNLz9VqFagOiI\" rel=\"nofollow\" target=\"_blank\">GaNFast\u2122 power ICs<\/a>\u00a0integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary\u00a0<a href=\"https:\/\/www.globenewswire.com\/Tracker?data=rVLH-hdmgZDaBEtEBQ0AJwcVH2mR_8wVMXGsJgWOQmkpXgC8BtKRBTMyFD4JYnc7BadT7daUZgUNavEKer1E8hEbGOZ1KAD6Cn5_hZoOgc7ynn1toflcJmSqEQvfcs5l\" rel=\"nofollow\" target=\"_blank\">GeneSiC\u2122 power<\/a>\u00a0devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance \/ industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending, with the industry\u2019s first and only\u00a0<a href=\"https:\/\/www.globenewswire.com\/Tracker?data=ae51ugoiPwBa-Yroa0v671DlwRiPYVLIr7LBkujQhD0bTxeUmbBBhSuWsjiRwP0usEhrqRBbdjwiS1nSa2mMUu5H5B-Zz3BIkJGA7sJLXxSRRrvOzHLt3QKXTEiQWJwnj-QqOyIwH6_1AHKXzmJ5rkqAVFA3GxBxTe2MR_L2PjU=\" rel=\"nofollow\" target=\"_blank\">20-year GaNFast warranty<\/a>. Navitas is the world\u2019s first semiconductor company to be\u00a0<a href=\"https:\/\/www.globenewswire.com\/Tracker?data=TN0P5dA4mzV9zbR7QZ94opeZ8kSTSXljeGk5CnXfMZkKzi4hJrEl0hetIuPuFlR3Y62JIku4iIjrU_HiQjLdSKGUkBju0fXRXJxyyAmekY7xnhwwEoDL0Ysf37u6fvBsPUjVGgS5cXj8yD7mcm2DBzPRmia6aM-dqv0Tp6kKXiMDbqr7f5Nghe8X8EEkkz4f\" rel=\"nofollow\" target=\"_blank\">CarbonNeutral<sup>\u00ae<\/sup>-certified<\/a>.<\/p>\n<p><em>Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.<\/em><\/p>\n<p><strong>Contact Information<\/strong><br \/>Llew Vaughan-Edmunds, Sr Director, Product Management &amp; Marketing <br \/><a href=\"https:\/\/www.globenewswire.com\/Tracker?data=PBQR5VrQlZv363kUKWEUAeUwDqK1uUGuwi1bbLDdKJVYALAcuAkIWq-PxgiEZ03ZtRiLSgTyY1W9_KGuMZXGLUrebsE0kRc6daSFSHyN-0k=\" rel=\"nofollow\" target=\"_blank\">info@navitassemi.com<\/a><\/p>\n<p>Stephen Oliver, VP Corporate Marketing &amp; Investor Relations<br \/><a href=\"https:\/\/www.globenewswire.com\/Tracker?data=71YKxPgtV1pXZ4JiezTNsgywu0XqnLLL4yXtFw4RXQw-TKFismV2bxpR9hzyxOu1y6PGNIUvU0rC55AblvTsHbcwLgpY7-fhK8CK2ra5A54=\" rel=\"nofollow\" target=\"_blank\">ir@navitassemi.com<\/a><\/p>\n<p>A photo accompanying this announcement is available at <a href=\"https:\/\/www.globenewswire.com\/Tracker?data=ttWb4lnWr8EM0pkulrqOch_X5qckjGlrgF_KgUzZgBi7fPdkN4PkEgEEwRSZm_vcxbt8wlGgCjotMCe5LUjXAlLHEs_QHyGHFaE3Gi4rYCV9VuWNfJe-yfCKhA7lcRzqDs4TYFMhbNB9pAVkObVF_5-hAZwoS9EY56f0leguU8M_zanpwm8kZkbzwt2iwfHkaJidMmpcOYOyreOhGN51HwmZlqC_MwsjM311H_ziUNIFkcoAJvVogMn556AmCi5lV4galfKiWEJ_rNkGC4IgzQ==\" rel=\"nofollow\" target=\"_blank\">https:\/\/www.globenewswire.com\/NewsRoom\/AttachmentNg\/440b0960-3d04-4971-ab04-797bd1fff72e<\/a><\/p>\n<p>      <img decoding=\"async\" alt=\"\" class=\"__GNW8366DE3E__IMG\" src=\"https:\/\/www.globenewswire.com\/newsroom\/ti?nf=OTM2MjM5NiM2NzYyMTYxIzIyMTExNjM=\" \/><br \/>\n      <br \/>\n      <img decoding=\"async\" alt=\"\" src=\"https:\/\/ml.globenewswire.com\/media\/ZWNhN2EyYWUtOTk1ZS00YzY2LWE3NzctMWJmNGIzMWZlYjVkLTEyMjI3MTY=\/tiny\/Navitas-Semiconductor-Corporat.png\" \/>\n    <\/div>\n<div class=\"mw_contactinfo\"><\/div>\n","protected":false},"excerpt":{"rendered":"<p>TORRANCE, Calif., Feb. 21, 2025 (GLOBE NEWSWIRE) &#8212; Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will attend APEC 2025 and highlight the latest advances in GaN and SiC wide bandgap technologies for AI data center EV, and mobile applications. Additionally, Navitas will highlight its latest \u2018paradigm in power conversion\u2019, unveiled in a live-streamed press event on the 12th of March. APEC takes place at Atlanta&#8217;s Georgia World Congress Center from March 16th to 20th. The company&#8217;s \u201cPlanet Navitas\u201d stand (Booth #1107) will showcase the company\u2019s mission to \u2018Electrify our World\u2122\u2019 by advancing the transition from legacy silicon to next-generation, &hellip; <\/p>\n<p class=\"link-more\"><a href=\"https:\/\/www.marketnewsdesk.com\/index.php\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\/\" class=\"more-link\">Continue reading<span class=\"screen-reader-text\"> &#8220;Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025&#8221;<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[],"tags":[],"class_list":["post-816235","post","type-post","status-publish","format-standard","hentry"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.5 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025 - Market Newsdesk<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.marketnewsdesk.com\/index.php\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025 - Market Newsdesk\" \/>\n<meta property=\"og:description\" content=\"TORRANCE, Calif., Feb. 21, 2025 (GLOBE NEWSWIRE) &#8212; Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will attend APEC 2025 and highlight the latest advances in GaN and SiC wide bandgap technologies for AI data center EV, and mobile applications. Additionally, Navitas will highlight its latest \u2018paradigm in power conversion\u2019, unveiled in a live-streamed press event on the 12th of March. APEC takes place at Atlanta&#8217;s Georgia World Congress Center from March 16th to 20th. The company&#8217;s \u201cPlanet Navitas\u201d stand (Booth #1107) will showcase the company\u2019s mission to \u2018Electrify our World\u2122\u2019 by advancing the transition from legacy silicon to next-generation, &hellip; Continue reading &quot;Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025&quot;\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.marketnewsdesk.com\/index.php\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\/\" \/>\n<meta property=\"og:site_name\" content=\"Market Newsdesk\" \/>\n<meta property=\"article:published_time\" content=\"2025-02-21T13:35:01+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.globenewswire.com\/newsroom\/ti?nf=OTM2MjM5NiM2NzYyMTYxIzIyMTExNjM=\" \/>\n<meta name=\"author\" content=\"Newsdesk\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Newsdesk\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"5 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\\\/\"},\"author\":{\"name\":\"Newsdesk\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/#\\\/schema\\\/person\\\/482f27a394d4fda80ecb5499e519d979\"},\"headline\":\"Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025\",\"datePublished\":\"2025-02-21T13:35:01+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\\\/\"},\"wordCount\":949,\"image\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/www.globenewswire.com\\\/newsroom\\\/ti?nf=OTM2MjM5NiM2NzYyMTYxIzIyMTExNjM=\",\"inLanguage\":\"en-US\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\\\/\",\"url\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/navitas-to-unveil-breakthrough-advances-in-gan-and-sic-for-ai-data-center-ev-and-mobile-applications-at-apec-2025\\\/\",\"name\":\"Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025 - 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