{"id":757354,"date":"2023-05-10T11:08:06","date_gmt":"2023-05-10T15:08:06","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs\/"},"modified":"2023-05-10T11:08:06","modified_gmt":"2023-05-10T15:08:06","slug":"new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs\/","title":{"rendered":"New Vishay Intertechnology Gen 3 650 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs"},"content":{"rendered":"

\nFeaturing an MPS Design, 4 A to 40 A Devices Offer Lower Forward Voltage Drop, Capacitive Charge, and Reverse Leakage Current
\n<\/h2>\n
\n

MALVERN, Pa., May 10, 2023 (GLOBE NEWSWIRE) — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 17 new Gen 3 650 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs.<\/p>\n

The next-generation SiC diodes released today consist of 4 A to 40 A devices in the TO-22OAC\u00a02L and TO-247AD 3L through-hole and D\u00b2PAK 2L (TO-263AB 2L) surface-mount packages. Their MPS structure reduces their forward voltage drop by 0.3 V compared to previous-generation solutions, while their forward voltage drop times capacitive charge \u2014 a key figure of merit (FOM) for power efficiency \u2014 is 17 % lower.<\/p>\n

The diodes\u2019 typical reverse leakage current is 30 % lower at room temperature and 70 % lower at high temperature than the closest competing solution. This reduces conduction losses to ensure high system efficiency during light loads and idling. Unlike ultrafast diodes, the Gen 3 devices have virtually no recovery tail, which further improves efficiency.<\/p>\n

Compared to silicon diodes with comparable breakdown voltages, the SiC devices offer higher thermal conductivity, lower reverse current, and shorter reverse recovery times. The diodes\u2019 reverse recovery times are nearly temperature-independent, enabling operation at higher temperatures to +175 \u00b0C without the shifts in power efficiency caused by switching losses.<\/p>\n

Typical applications for the devices will include AC\/DC PFC and DC\/DC ultra high frequency output rectification in FBPS and LLC converters for energy generation and exploration applications. Offering high reliability, the RoHS-compliant and halogen-free diodes have passed higher temperature reverse bias (HTRB) testing of 2000 hours and temperature cycling testing of 2000 thermal cycles. This is double the testing hours and cycles of AEC-Q101 requirements.<\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\n Part #<\/strong>\n <\/td>\n\n I<\/strong>
\n
\n F(AV)
<\/strong>
\n <\/sub>
\n (A)<\/strong>\n <\/td>\n		\n I<\/strong>
\n
\n FSM
<\/strong>
\n <\/sub>
\n (A)<\/strong>\n <\/td>\n		\n V<\/strong>
\n
\n F<\/strong>
\n <\/sub>
\n at
I<\/strong>
\n
\n F<\/strong>
\n <\/sub>
\n (V)<\/strong>\n <\/td>\n		\n Q<\/strong>
\n
\n C
<\/strong>
\n <\/sub>
\n (nC)<\/strong>\n <\/td>\n		\n Configuration<\/strong>\n <\/td>\n\n Package<\/strong>\n <\/td>\n<\/tr>\n
\n
\n VS-3C04ET07S2L-M3<\/u>
\n <\/a>\n <\/td>\n		4<\/td>\n29<\/td>\n1.5<\/td>\n12<\/td>\nSingle<\/td>\nD\u00b2PAK 2L<\/td>\n<\/tr>\n
\n
\n VS-3C06ET07S2L-M3<\/u>
\n <\/a>\n <\/td>\n		6<\/td>\n42<\/td>\n1.5<\/td>\n17<\/td>\nSingle<\/td>\nD\u00b2PAK 2L<\/td>\n<\/tr>\n
\n
\n VS-3C08ET07S2L-M3<\/u>
\n <\/a>\n <\/td>\n		8<\/td>\n54<\/td>\n1.5<\/td>\n22<\/td>\nSingle<\/td>\nD\u00b2PAK 2L<\/td>\n<\/tr>\n
\n
\n VS-3C10ET07S2L-M3<\/u>
\n <\/a>\n <\/td>\n		10<\/td>\n60<\/td>\n1.46<\/td>\n29<\/td>\nSingle<\/td>\nD\u00b2PAK 2L<\/td>\n<\/tr>\n
\n
\n VS-3C12ET07S2L-M3<\/u>
\n <\/a>\n <\/td>\n		12<\/td>\n83<\/td>\n1.5<\/td>\n34<\/td>\nSingle<\/td>\nD\u00b2PAK 2L<\/td>\n<\/tr>\n
\n
\n VS-3C16ET07S2L-M3<\/u>
\n <\/a>\n <\/td>\n		16<\/td>\n104<\/td>\n1.5<\/td>\n44<\/td>\nSingle<\/td>\nD\u00b2PAK 2L<\/td>\n<\/tr>\n
\n
\n VS-3C20ET07S2L-M3<\/u>
\n <\/a>\n <\/td>\n		20<\/td>\n110<\/td>\n1.5<\/td>\n53<\/td>\nSingle<\/td>\nD\u00b2PAK 2L<\/td>\n<\/tr>\n
\n
\n VS-3C04ET07T-M3<\/u>
\n <\/a>\n <\/td>\n		4<\/td>\n29<\/td>\n1.5<\/td>\n12<\/td>\nSingle<\/td>\nTO-220AC 2L<\/td>\n<\/tr>\n
\n
\n VS-3C06ET07T-M3<\/u>
\n <\/a>\n <\/td>\n		6<\/td>\n42<\/td>\n1.5<\/td>\n17<\/td>\nSingle<\/td>\nTO-220AC 2L<\/td>\n<\/tr>\n
\n
\n VS-3C08ET07T-M3<\/u>
\n <\/a>\n <\/td>\n		8<\/td>\n54<\/td>\n1.5<\/td>\n22<\/td>\nSingle<\/td>\nTO-220AC 2L<\/td>\n<\/tr>\n
\n
\n VS-3C10ET07T-M3<\/u>
\n <\/a>\n <\/td>\n		10<\/td>\n60<\/td>\n1.46<\/td>\n29<\/td>\nSingle<\/td>\nTO-220AC 2L<\/td>\n<\/tr>\n
\n
\n VS-3C12ET07T-M3<\/u>
\n <\/a>\n <\/td>\n		12<\/td>\n83<\/td>\n1.5<\/td>\n34<\/td>\nSingle<\/td>\nTO-220AC 2L<\/td>\n<\/tr>\n
\n
\n VS-3C16ET07T-M3<\/u>
\n <\/a>\n <\/td>\n		16<\/td>\n104<\/td>\n1.5<\/td>\n44<\/td>\nSingle<\/td>\nTO-220AC 2L<\/td>\n<\/tr>\n
\n
\n VS-3C20ET07T-M3<\/u>
\n <\/a>\n <\/td>\n		20<\/td>\n110<\/td>\n1.5<\/td>\n53<\/td>\nSingle<\/td>\nTO-220AC 2L<\/td>\n<\/tr>\n
\n
\n VS-3C16CP07L-M3<\/u>
\n <\/a>\n <\/td>\n		2 x 8<\/td>\n54<\/td>\n1.5<\/td>\n22<\/td>\nCommon cathode<\/td>\nTO-247AD 3L<\/td>\n<\/tr>\n
\n
\n VS-3C20CP07L-M3<\/u>
\n <\/a>\n <\/td>\n		2 x 10<\/td>\n60<\/td>\n1.46<\/td>\n29<\/td>\nCommon cathode<\/td>\nTO-247AD 3L<\/td>\n<\/tr>\n
\n
\n VS-3C40CP07L-M3<\/u>
\n <\/a>\n <\/td>\n		2 x 20<\/td>\n110<\/td>\n1.5<\/td>\n53<\/td>\nCommon cathode<\/td>\nTO-247AD 3L<\/td>\n<\/tr>\n<\/table>\n

\n
Samples and production quantities of the new SiC diodes are available now, with lead times of eight weeks.<\/p>\n

Vishay manufactures one of the world\u2019s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.<\/strong>\u2122 Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com<\/u><\/a>.<\/p>\n

\n The DNA of tech<\/strong>\u2122 is a trademark of Vishay Intertechnology.<\/p>\n

\n Vishay on Facebook:<\/strong>
\n
\n http:\/\/www.facebook.com\/VishayIntertechnology<\/u>
\n <\/a>
\n
\n Vishay Twitter feed:<\/strong>
\n
\n http:\/\/twitter.com\/vishayindust<\/u>
\n <\/a>\n <\/p>\n

\n Link to product photo:<\/strong>
\n
\n
\n https:\/\/www.flickr.com\/photos\/vishay\/albums\/72177720308009535<\/u>
\n <\/a>\n <\/p>\n

\n For more information please contact:
<\/strong>Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com<\/u><\/a>
<\/a>\u00a0or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com<\/u><\/a><\/p>\n<\/p>\n


\n
\n \n <\/div>\n

<\/div>\n","protected":false},"excerpt":{"rendered":"

Featuring an MPS Design, 4 A to 40 A Devices Offer Lower Forward Voltage Drop, Capacitive Charge, and Reverse Leakage Current MALVERN, Pa., May 10, 2023 (GLOBE NEWSWIRE) — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 17 new Gen 3 650 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs. The next-generation SiC diodes released today consist of 4 A to 40 A devices in the TO-22OAC\u00a02L and TO-247AD 3L through-hole and D\u00b2PAK 2L (TO-263AB 2L) surface-mount packages. Their MPS structure reduces their forward voltage drop by … <\/p>\n

Continue reading “New Vishay Intertechnology Gen 3 650 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs”<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[],"tags":[],"class_list":["post-757354","post","type-post","status-publish","format-standard","hentry"],"yoast_head":"\nNew Vishay Intertechnology Gen 3 650 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs - Market Newsdesk<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.marketnewsdesk.com\/index.php\/new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"New Vishay Intertechnology Gen 3 650 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs - Market Newsdesk\" \/>\n<meta property=\"og:description\" content=\"Featuring an MPS Design, 4 A to 40 A Devices Offer Lower Forward Voltage Drop, Capacitive Charge, and Reverse Leakage Current MALVERN, Pa., May 10, 2023 (GLOBE NEWSWIRE) — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 17 new Gen 3 650 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs. The next-generation SiC diodes released today consist of 4 A to 40 A devices in the TO-22OAC\u00a02L and TO-247AD 3L through-hole and D\u00b2PAK 2L (TO-263AB 2L) surface-mount packages. 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(NYSE: VSH) today introduced 17 new Gen 3 650 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs. The next-generation SiC diodes released today consist of 4 A to 40 A devices in the TO-22OAC\u00a02L and TO-247AD 3L through-hole and D\u00b2PAK 2L (TO-263AB 2L) surface-mount packages. Their MPS structure reduces their forward voltage drop by … Continue reading \"New Vishay Intertechnology Gen 3 650 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs\"","og_url":"https:\/\/www.marketnewsdesk.com\/index.php\/new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs\/","og_site_name":"Market Newsdesk","article_published_time":"2023-05-10T15:08:06+00:00","og_image":[{"url":"https:\/\/www.globenewswire.com\/newsroom\/ti?nf=ODgzNTY3NCM1NTg1Mjk3IzIwMTk4MDU=","type":"","width":"","height":""}],"author":"Newsdesk","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Newsdesk","Est. reading time":"3 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.marketnewsdesk.com\/index.php\/new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs\/#article","isPartOf":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs\/"},"author":{"name":"Newsdesk","@id":"https:\/\/www.marketnewsdesk.com\/#\/schema\/person\/482f27a394d4fda80ecb5499e519d979"},"headline":"New Vishay Intertechnology Gen 3 650 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs","datePublished":"2023-05-10T15:08:06+00:00","mainEntityOfPage":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs\/"},"wordCount":623,"image":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs\/#primaryimage"},"thumbnailUrl":"https:\/\/www.globenewswire.com\/newsroom\/ti?nf=ODgzNTY3NCM1NTg1Mjk3IzIwMTk4MDU=","inLanguage":"en-US"},{"@type":"WebPage","@id":"https:\/\/www.marketnewsdesk.com\/index.php\/new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs\/","url":"https:\/\/www.marketnewsdesk.com\/index.php\/new-vishay-intertechnology-gen-3-650-v-sic-schottky-diodes-increase-efficiency-and-reliability-for-switching-power-designs\/","name":"New Vishay Intertechnology Gen 3 650 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs - 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