{"id":755904,"date":"2023-05-08T08:42:26","date_gmt":"2023-05-08T12:42:26","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/"},"modified":"2023-05-08T08:42:26","modified_gmt":"2023-05-08T12:42:26","slug":"simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/","title":{"rendered":"Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm"},"content":{"rendered":"<p>        <!--.bwalignc { text-align: center; list-style-position: inside }\n.bwlistdisc { list-style-type: disc }body {font:normal small Arial,Helvetica,sans-serif;color:#000;background-color:#fff;padding:24px;margin:0;} a img {border:0;} h3 {font-size:medium;color:#000;margin:0 0 1em 0; text-align:center;}-->  <\/p>\n<p class=\"bwalignc\"><b>Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm<\/b><\/p>\n<p class=\"bwalignc\"><i>Device Readies Transphorm\u2019s Innovative Normally-off GaN Platform for Adoption in Next Generation Automotive and 3-Phase Power Systems<\/i><\/p>\n<p>GOLETA, Calif.&#8211;(<a href=\"http:\/\/www.businesswire.com\">BUSINESS WIRE<\/a>)&#8211;<a rel=\"nofollow\" href=\"https:\/\/cts.businesswire.com\/ct\/CT?id=smartlink&amp;url=http%3A%2F%2Fwww.transphormusa.com%2F&amp;esheet=53395193&amp;newsitemid=20230508005279&amp;lan=en-US&amp;anchor=Transphorm%2C+Inc.&amp;index=1&amp;md5=40dd1d2a54db95aac271b6dfbcc02b44\">Transphorm, Inc.<\/a> (Nasdaq: TGAN)\u2014global leader in fundamentally superior, quantitatively outperforming GaN power semiconductors\u2014today announced availability of its <a rel=\"nofollow\" href=\"https:\/\/cts.businesswire.com\/ct\/CT?id=smartlink&amp;url=https%3A%2F%2Fbit.ly%2F3HNLWFM&amp;esheet=53395193&amp;newsitemid=20230508005279&amp;lan=en-US&amp;anchor=1200+V+FET&amp;index=2&amp;md5=d0e6742b29f004fba448fa47c3595954\">1200 V FET<\/a> simulation model and preliminary datasheet. The TP120H070WS FET is the only 1200 V GaN-on-Sapphire power semiconductor introduced to date, making its model the first of its kind. Its release indicates Transphorm\u2019s ability to support future automotive power systems as well as three-phase power systems typically used in the broad industrial, datacom, and renewables markets. These applications will benefit from the 1200 V GaN device\u2019s higher power density and reliability along with equal or better performance at more reasonable cost points versus alternative technologies. Transphorm <a rel=\"nofollow\" href=\"https:\/\/cts.businesswire.com\/ct\/CT?id=smartlink&amp;url=https%3A%2F%2Fbit.ly%2F3HNsgl6&amp;esheet=53395193&amp;newsitemid=20230508005279&amp;lan=en-US&amp;anchor=recently+validated+the+GaN+device%26%238217%3Bs+higher+performance&amp;index=3&amp;md5=be5705ec835fe071890a67a142487716\">recently validated the GaN device\u2019s higher performance<\/a> ability in a 5 kW 900 V buck converter switching at 100 kHz. The 1200 V GaN device achieved 98.7% efficiency, exceeding that of a similarly rated production SiC MOSFET.<\/p>\n<p>\nThe innovative 1200 V technology also underscores Transphorm\u2019s leadership in GaN power conversion. Vertical integration, epitaxy ownership, and patented process paired with decades of engineering expertise enable the company to bring to market the highest performing GaN device portfolio with four additional major differentiators: Manufacturability, Drivability, Designability, and Reliability.<\/p>\n<p>\nPCIM 2023 attendees can learn more about the 1200 V device from Transphorm representatives at Hall 7, Booth 108 during May 9 \u2013 11.<\/p>\n<p><b>Preliminary Device Model Specifications and Access<\/b><\/p>\n<p>\nTransphorm\u2019s 1200 V technology is anchored in proven process and mature technology, satisfying customer confidence requirements. The GaN-on-Sapphire process is in volume production today in the LED market. Additionally, the 1200 V technology leverages the fundamentally superior, normally-off GaN platform used in Transphorm\u2019s current device portfolio.<\/p>\n<p>\nKey TP120H070WS device specifications include:<\/p>\n<ul class=\"bwlistdisc\">\n<li>\n70 m\u03a9 R<sub>DS<\/sub>(on)<\/p>\n<\/li>\n<li>\nNormally off<\/p>\n<\/li>\n<li>\nEfficient bidirectional current flow<\/p>\n<\/li>\n<li>\n\u00b1 20 Vmax gate robustness<\/p>\n<\/li>\n<li>\nLow 4Vth gate drive noise immunity<\/p>\n<\/li>\n<li>\nZero Q<sub>RR<\/sub><\/li>\n<li>\n3-lead TO-247 package<\/p>\n<\/li>\n<\/ul>\n<p>\nThe Verilog-A device model is recommended for use with the SIMetrix Pro v8.5 Circuit Simulator. A LTSpice model is in development and will be released in Q4 2023. Simulation modeling allows for fast and efficient power system design validation while reducing design iterations, development time, and hardware investments.<\/p>\n<p>\nThe device model files and datasheet are available for download here: <a rel=\"nofollow\" href=\"https:\/\/cts.businesswire.com\/ct\/CT?id=smartlink&amp;url=https%3A%2F%2Fwww.transphormusa.com%2Fen%2Fproducts%2F%23models&amp;esheet=53395193&amp;newsitemid=20230508005279&amp;lan=en-US&amp;anchor=https%3A%2F%2Fwww.transphormusa.com%2Fen%2Fproducts%2F%23models&amp;index=4&amp;md5=2173234d007abbdd60567ca0e2bf64ca\">https:\/\/www.transphormusa.com\/en\/products\/#models<\/a>.<\/p>\n<p>\n1200 V FET samples are expected to be available by Q1 2024.<\/p>\n<p><b>Transphorm GaN in Automotive Power Systems and Charging Ecosystem<\/b><\/p>\n<p>\nWhile the 1200 V GaN device is an optimal solution for various market applications, it offers a unique advantage to automotive systems.<\/p>\n<p>\nThe electric vehicle industry, especially at the higher kilowatt nodes for larger vehicles, is moving toward 800 V batteries in the latter half of this decade. As such, 1200 V power conversion switches will be used to deliver the required performance level. Transphorm\u2019s 1200 V platform is therefore well positioned for success in next generation onboard charger, DC-to-DC converters, drive inverters, and pole charging systems.<\/p>\n<p>\nFor current model EVs using 400 V batteries, Transphorm offers 650 V normally-off SuperGaN<sup>\u00ae<\/sup> FETs that are AEC-Q101 qualified to 175\u00b0C and in volume production.<\/p>\n<p>\n\u201cWe are the leading power semiconductor company demonstrating and delivering on the promise of GaN,\u201d said Umesh Mishra, CTO and Co-founder, Transphorm. \u201cOur expertise brings to market unmatched GaN devices that set new standards every day for power density, performance, and system cost. Our 1200 V technology is a testament to our engineering team\u2019s innovative vision and determination. We\u2019re proving that GaN can very easily play in application markets previously slated for silicon carbide, which opens a wide range of market adoption potential for our business and GaN in general.\u201d<\/p>\n<p><b>About Transphorm<\/b><\/p>\n<p>\nTransphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry\u2019s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company\u2019s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm\u2019s innovations move power electronics beyond the limitations of silicon to achieve over 99% efficiency, 50% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit <a rel=\"nofollow\" href=\"https:\/\/cts.businesswire.com\/ct\/CT?id=smartlink&amp;url=http%3A%2F%2Fwww.transphormusa.com&amp;esheet=53395193&amp;newsitemid=20230508005279&amp;lan=en-US&amp;anchor=www.transphormusa.com&amp;index=5&amp;md5=1f03324a40115e802700e4e4693d750d\">www.transphormusa.com<\/a>. Follow us on Twitter @transphormusa and WeChat @ Transphorm_GaN.<\/p>\n<p><i>The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.<\/i><\/p>\n<p><img decoding=\"async\" alt=\"\" src=\"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&amp;sty=20230508005279r1&amp;sid=flmnd&amp;distro=nx&amp;lang=en\" style=\"width:0;height:0\" \/><span class=\"bwct31415\" \/><\/p>\n<p id=\"mmgallerylink\"><span id=\"mmgallerylink-phrase\">View source version on businesswire.com: <\/span><span id=\"mmgallerylink-link\"><a href=\"https:\/\/www.businesswire.com\/news\/home\/20230508005279\/en\/\" rel=\"nofollow\">https:\/\/www.businesswire.com\/news\/home\/20230508005279\/en\/<\/a><\/span><\/p>\n<p><b>Press Contact:<br \/>\n<\/b><br \/>Heather Ailara<br \/>\n<br \/>+1.973.567.6040<br \/>\n<br \/><a rel=\"nofollow\" href=\"mailto:heather.ailara@transphormusa.com\">heather.ailara@transphormusa.com<\/a><\/p>\n<p><b>Investor Contacts:<br \/>\n<\/b><br \/>David Hanover or Jack Perkins<br \/>\n<br \/>KCSA Strategic Communications<br \/>\n<br \/><a rel=\"nofollow\" href=\"mailto:transphorm@kcsa.com\">transphorm@kcsa.com<\/a><\/p>\n<p><b>KEYWORDS:<\/b> California Switzerland United States Austria North America Asia Pacific Europe Germany<\/p>\n<p><b>INDUSTRY KEYWORDS:<\/b> Automotive Manufacturing EV\/Electric Vehicles Automotive Technology Manufacturing Semiconductor Other Technology Vehicle Technology Alternative Vehicles\/Fuels Engineering Hardware<\/p>\n<p><b>MEDIA:<\/b><\/p>\n<table cellpadding=\"3\" cellspacing=\"3\">\n<tr>\n<td><font face=\"Arial\" size=\"2\"><b>Logo<\/b><\/font><\/td>\n<\/tr>\n<tr>\n<td><img decoding=\"async\" src=\"https:\/\/mms.businesswire.com\/media\/20230508005279\/en\/817268\/3\/Transphorm_CLR.jpg\" alt=\"Logo\" \/><\/td>\n<\/tr>\n<tr>\n<td><font face=\"Arial\" size=\"2\"><\/font><\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":"<p>Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm Device Readies Transphorm\u2019s Innovative Normally-off GaN Platform for Adoption in Next Generation Automotive and 3-Phase Power Systems GOLETA, Calif.&#8211;(BUSINESS WIRE)&#8211;Transphorm, Inc. (Nasdaq: TGAN)\u2014global leader in fundamentally superior, quantitatively outperforming GaN power semiconductors\u2014today announced availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is the only 1200 V GaN-on-Sapphire power semiconductor introduced to date, making its model the first of its kind. Its release indicates Transphorm\u2019s ability to support future automotive power systems as well as three-phase power systems typically used in the broad industrial, datacom, and renewables markets. These applications will benefit from the 1200 V GaN device\u2019s higher power density and reliability &hellip; <\/p>\n<p class=\"link-more\"><a href=\"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/\" class=\"more-link\">Continue reading<span class=\"screen-reader-text\"> &#8220;Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm&#8221;<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[],"tags":[],"class_list":["post-755904","post","type-post","status-publish","format-standard","hentry"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.5 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm - Market Newsdesk<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm - Market Newsdesk\" \/>\n<meta property=\"og:description\" content=\"Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm Device Readies Transphorm\u2019s Innovative Normally-off GaN Platform for Adoption in Next Generation Automotive and 3-Phase Power Systems GOLETA, Calif.&#8211;(BUSINESS WIRE)&#8211;Transphorm, Inc. (Nasdaq: TGAN)\u2014global leader in fundamentally superior, quantitatively outperforming GaN power semiconductors\u2014today announced availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is the only 1200 V GaN-on-Sapphire power semiconductor introduced to date, making its model the first of its kind. Its release indicates Transphorm\u2019s ability to support future automotive power systems as well as three-phase power systems typically used in the broad industrial, datacom, and renewables markets. These applications will benefit from the 1200 V GaN device\u2019s higher power density and reliability &hellip; Continue reading &quot;Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm&quot;\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/\" \/>\n<meta property=\"og:site_name\" content=\"Market Newsdesk\" \/>\n<meta property=\"article:published_time\" content=\"2023-05-08T12:42:26+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&amp;sty=20230508005279r1&amp;sid=flmnd&amp;distro=nx&amp;lang=en\" \/>\n<meta name=\"author\" content=\"Newsdesk\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Newsdesk\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"4 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\\\/\"},\"author\":{\"name\":\"Newsdesk\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/#\\\/schema\\\/person\\\/482f27a394d4fda80ecb5499e519d979\"},\"headline\":\"Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm\",\"datePublished\":\"2023-05-08T12:42:26+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\\\/\"},\"wordCount\":838,\"image\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/cts.businesswire.com\\\/ct\\\/CT?id=bwnews&amp;sty=20230508005279r1&amp;sid=flmnd&amp;distro=nx&amp;lang=en\",\"inLanguage\":\"en-US\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\\\/\",\"url\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\\\/\",\"name\":\"Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm - 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(Nasdaq: TGAN)\u2014global leader in fundamentally superior, quantitatively outperforming GaN power semiconductors\u2014today announced availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is the only 1200 V GaN-on-Sapphire power semiconductor introduced to date, making its model the first of its kind. Its release indicates Transphorm\u2019s ability to support future automotive power systems as well as three-phase power systems typically used in the broad industrial, datacom, and renewables markets. These applications will benefit from the 1200 V GaN device\u2019s higher power density and reliability &hellip; Continue reading \"Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm\"","og_url":"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/","og_site_name":"Market Newsdesk","article_published_time":"2023-05-08T12:42:26+00:00","og_image":[{"url":"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&amp;sty=20230508005279r1&amp;sid=flmnd&amp;distro=nx&amp;lang=en","type":"","width":"","height":""}],"author":"Newsdesk","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Newsdesk","Est. reading time":"4 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/#article","isPartOf":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/"},"author":{"name":"Newsdesk","@id":"https:\/\/www.marketnewsdesk.com\/#\/schema\/person\/482f27a394d4fda80ecb5499e519d979"},"headline":"Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm","datePublished":"2023-05-08T12:42:26+00:00","mainEntityOfPage":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/"},"wordCount":838,"image":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/#primaryimage"},"thumbnailUrl":"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&amp;sty=20230508005279r1&amp;sid=flmnd&amp;distro=nx&amp;lang=en","inLanguage":"en-US"},{"@type":"WebPage","@id":"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/","url":"https:\/\/www.marketnewsdesk.com\/index.php\/simulation-model-of-industrys-first-1200-v-gan-on-sapphire-device-released-by-transphorm\/","name":"Simulation Model of Industry\u2019s First 1200 V GaN-on-Sapphire Device Released by Transphorm - 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