{"id":752075,"date":"2023-04-27T09:53:11","date_gmt":"2023-04-27T13:53:11","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/transphorm-introduces-six-supergan-fets-pin-to-pin-compatible-with-e-mode-devices\/"},"modified":"2023-04-27T09:53:11","modified_gmt":"2023-04-27T13:53:11","slug":"transphorm-introduces-six-supergan-fets-pin-to-pin-compatible-with-e-mode-devices","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/transphorm-introduces-six-supergan-fets-pin-to-pin-compatible-with-e-mode-devices\/","title":{"rendered":"Transphorm Introduces Six SuperGaN FETs Pin-to-Pin Compatible With e-mode Devices"},"content":{"rendered":"

<\/p>\n

Transphorm Introduces Six SuperGaN FETs Pin-to-Pin Compatible With e-mode Devices<\/b><\/p>\n

New Industry Standard PQFN Packages Serve as Easy Drop-in Replacements with Higher Performance via d-mode GaN<\/i><\/p>\n

GOLETA, Calif.–(BUSINESS WIRE<\/a>)–Transphorm, Inc.<\/a> (Nasdaq: TGAN)\u2014a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products\u2014announced today the availability of six (6) surface mount devices (SMDs) available in Industry Standard PQFN 5×6 and 8×8 packages. These SMDs deliver the reliability and performance advantages offered by Transphorm\u2019s patented SuperGaN\u00ae<\/sup> d-mode two-switch normally-off platform in the package configurations typically used by competitive e-mode GaN devices. As a result, these six devices can easily serve as a first design source or as pin-to-pin drop-in replacements and\/or secondary sources for e-mode GaN solutions.<\/p>\n

\nFor power systems that require additional thermal performance from the SuperGaN platform, Transphorm also offers SMDs in optimized Performance packages. All Transphorm devices offer easy designability and drivability regardless of packaging given the d-mode configuration\u2019s use of a low-voltage Silicon MOSFET paired with the GaN HEMT. This platform configuration also allows for the use of standard, off-the-shelf controllers and\/or drivers adding to the Transphorm portfolio\u2019s superior drivability and designability.<\/p>\n

\n\u201cTransphorm continues to produce a strong GaN device portfolio, one that covers the widest power spectrum today. We\u2019ve solidified our low power strategy with the release of these Industry Standard packages, which follow the recently announced SiP developed with Weltrend Semiconductors,\u201d said Philip Zuk, Senior Vice President of Business Development and Marketing, Transphorm. \u201cCustomers now have a choice of how they can tap into the advantages of SuperGaN whether it be through Performance packages, pin-to-pin e-mode compatible Industry Standard packages, or a System-in-Package.\u201d<\/p>\n

SuperGaN Drop-In Replacement Advantages<\/b><\/p>\n

\nReplacing e-mode devices with SuperGaN d-mode FETs has proven to deliver higher performance and lower operating temperature through lower conduction losses, resulting in longer lifetime reliability. This is due to the fundamental intrinsic superiority of the d-mode GaN normally-off device vs. the e-mode GaN normally-off device. One example of such validation can be found in a recent head-to-head comparison wherein 50 m\u03a9 e-mode was replaced by 72 m\u03a9 SuperGaN technology in a 280 W gaming laptop charger: https:\/\/bit.ly\/diraztbISP<\/a>.<\/p>\n

\nIn the charger analysis, the SuperGaN FETs operated at the controller\u2019s output voltage range (whereas e-mode had to level shift) with cooler temperatures. The SuperGaN temperature coefficient of resistance (TCR) is approximately 25 percent lower than that of e-mode, contributing to the lower conduction losses. Additionally, the peripheral component count was reduced by 20%, suggesting a lower BOM cost.<\/p>\n

Industry Standard SMD Portfolio<\/b><\/p>\n

\nTransphorm\u2019s Industry Standard PQFN device list follows:<\/p>\n\n\n\n\n\n\n\n\n
\n

Part<\/b><\/p>\n<\/td>\n

\n

RDS(on) m\u03a9<\/b><\/p>\n<\/td>\n

\n

Package<\/b><\/p>\n<\/td>\n<\/tr>\n

\n

\nTP65H070G4LSGB<\/p>\n<\/td>\n

\n

\n72<\/p>\n<\/td>\n

\n

\nPQFN88<\/p>\n<\/td>\n<\/tr>\n

\n

\nTP65H150BG4JSG<\/p>\n<\/td>\n

\n

\n150<\/p>\n<\/td>\n

\n

\nPQFN56<\/p>\n<\/td>\n<\/tr>\n

\n

\nTP65H150G4LSGB<\/p>\n<\/td>\n

\n

\n150<\/p>\n<\/td>\n

\n

\nPQFN88<\/p>\n<\/td>\n<\/tr>\n

\n

\nTP65H300G4JSGB<\/p>\n<\/td>\n

\n

\n240<\/p>\n<\/td>\n

\n

\nPQFN56<\/p>\n<\/td>\n<\/tr>\n

\n

\nTP65H300G4LSGB<\/p>\n<\/td>\n

\n

\n240<\/p>\n<\/td>\n

\n

\nPQFN88<\/p>\n<\/td>\n<\/tr>\n

\n

\nTP65H480G4JSGB<\/p>\n<\/td>\n

\n

\n480<\/p>\n<\/td>\n

\n

\nPQFN56<\/p>\n<\/td>\n<\/tr>\n<\/table>\n

\nKey features shared across devices include:<\/p>\n