{"id":743981,"date":"2023-03-30T10:17:06","date_gmt":"2023-03-30T14:17:06","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/"},"modified":"2023-03-30T10:17:06","modified_gmt":"2023-03-30T14:17:06","slug":"industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/","title":{"rendered":"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density"},"content":{"rendered":"

<\/p>\n

Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density<\/b><\/p>\n

PLANO, Texas–(BUSINESS WIRE<\/a>)–
\nDiodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4<\/a> N-channel SiC MOSFET. This device addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers.\n<\/p>\n

\nThe DMWS120H100SM4 operates at a high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (R\u03b8JC<\/sub> = 0.6\u00b0C\/W), making it well-suited for applications running in harsh environments. This MOSFET has a low RDS(ON)<\/sub> (typical) of only 80m\u2126 (for a 15V gate drive) to minimize conduction losses and provide higher efficiency. In addition, the device has a gate charge of only 52nC to reduce switching losses and lower the package temperature.\n<\/p>\n

\nThis product is the first SiC MOSFET on the market in a TO247-4 package. The additional Kelvin sense pin can be connected to the source of the MOSFET to optimize the switching performance, thereby enabling even higher power densities.\n<\/p>\n

\nThe DMWS120H100SM4<\/a> is available at $21.50 in 20-piece quantities.\n<\/p>\n

About Diodes Incorporated<\/b><\/p>\n

\nDiodes Incorporated (Nasdaq: DIOD), a Standard and Poor\u2019s SmallCap 600 and Russell 3000 Index company, delivers high-quality semiconductor products to the world\u2019s leading companies in the automotive, industrial, computing, consumer electronics, and communications markets. We leverage our expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers\u2019 needs. Our broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 32 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets. For more information, visit www.diodes.com<\/a>.\n<\/p>\n

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.<\/i><\/p>\n

All other trademarks are the property of their respective owners.<\/i><\/p>\n

\u00a92023 Diodes Incorporated. All Rights Reserved.<\/i><\/p>\n

\"\"<\/p>\n

View source version on businesswire.com: <\/span>https:\/\/www.businesswire.com\/news\/home\/20230330005030\/en\/<\/a><\/span><\/p>\n

Company Contact:
\n<\/b>
Diodes Incorporated
\n
Emily Yang
\n
SVP, Worldwide Sales and Marketing
\n
P: 972-987-3900
\n
Contact Us<\/a><\/p>\n

Investor Relations Contact:
\n<\/b>
Shelton Group
\n
Leanne K. Sievers
\n
President
\n
P: 949-224-3874
\n
E: lsievers@sheltongroup.com<\/a><\/p>\n

KEYWORDS:<\/b> United States North America Texas<\/p>\n

INDUSTRY KEYWORDS:<\/b> Technology Hardware Semiconductor<\/p>\n

MEDIA:<\/b><\/p>\n\n\n\n\n
Logo<\/b><\/font><\/td>\n<\/tr>\n
\"Logo\"<\/td>\n<\/tr>\n
<\/font><\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density PLANO, Texas–(BUSINESS WIRE)– Diodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET. This device addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers. The DMWS120H100SM4 operates at a high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (R\u03b8JC = 0.6\u00b0C\/W), making it well-suited for applications running in harsh environments. This MOSFET has a low RDS(ON) (typical) of only 80m\u2126 (for a 15V gate drive) to minimize conduction losses … <\/p>\n

Continue reading “Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density”<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[],"tags":[],"class_list":["post-743981","post","type-post","status-publish","format-standard","hentry"],"yoast_head":"\nIndustrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density - Market Newsdesk<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density - Market Newsdesk\" \/>\n<meta property=\"og:description\" content=\"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density PLANO, Texas–(BUSINESS WIRE)– Diodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET. This device addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers. The DMWS120H100SM4 operates at a high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (R\u03b8JC = 0.6\u00b0C\/W), making it well-suited for applications running in harsh environments. This MOSFET has a low RDS(ON) (typical) of only 80m\u2126 (for a 15V gate drive) to minimize conduction losses … Continue reading "Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density"\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/\" \/>\n<meta property=\"og:site_name\" content=\"Market Newsdesk\" \/>\n<meta property=\"article:published_time\" content=\"2023-03-30T14:17:06+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&sty=20230330005030r1&sid=flmnd&distro=nx&lang=en\" \/>\n<meta name=\"author\" content=\"Newsdesk\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Newsdesk\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"2 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/\"},\"author\":{\"name\":\"Newsdesk\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/#\\\/schema\\\/person\\\/482f27a394d4fda80ecb5499e519d979\"},\"headline\":\"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density\",\"datePublished\":\"2023-03-30T14:17:06+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/\"},\"wordCount\":400,\"image\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/cts.businesswire.com\\\/ct\\\/CT?id=bwnews&sty=20230330005030r1&sid=flmnd&distro=nx&lang=en\",\"inLanguage\":\"en-US\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/\",\"url\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/\",\"name\":\"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density - Market Newsdesk\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/cts.businesswire.com\\\/ct\\\/CT?id=bwnews&sty=20230330005030r1&sid=flmnd&distro=nx&lang=en\",\"datePublished\":\"2023-03-30T14:17:06+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/#\\\/schema\\\/person\\\/482f27a394d4fda80ecb5499e519d979\"},\"breadcrumb\":{\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/#breadcrumb\"},\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/#primaryimage\",\"url\":\"https:\\\/\\\/cts.businesswire.com\\\/ct\\\/CT?id=bwnews&sty=20230330005030r1&sid=flmnd&distro=nx&lang=en\",\"contentUrl\":\"https:\\\/\\\/cts.businesswire.com\\\/ct\\\/CT?id=bwnews&sty=20230330005030r1&sid=flmnd&distro=nx&lang=en\"},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/#website\",\"url\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/\",\"name\":\"Market Newsdesk\",\"description\":\"Latest Business News in Real Time\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"en-US\"},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/#\\\/schema\\\/person\\\/482f27a394d4fda80ecb5499e519d979\",\"name\":\"Newsdesk\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/a0d0bd5b0f0ca12a265a459b13169dac35f33776d8501eda5e68844a366f2f46?s=96&d=mm&r=g\",\"url\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/a0d0bd5b0f0ca12a265a459b13169dac35f33776d8501eda5e68844a366f2f46?s=96&d=mm&r=g\",\"contentUrl\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/a0d0bd5b0f0ca12a265a459b13169dac35f33776d8501eda5e68844a366f2f46?s=96&d=mm&r=g\",\"caption\":\"Newsdesk\"},\"url\":\"https:\\\/\\\/www.marketnewsdesk.com\\\/index.php\\\/author\\\/newsdesk\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density - Market Newsdesk","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/","og_locale":"en_US","og_type":"article","og_title":"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density - Market Newsdesk","og_description":"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density PLANO, Texas–(BUSINESS WIRE)– Diodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET. This device addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers. The DMWS120H100SM4 operates at a high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (R\u03b8JC = 0.6\u00b0C\/W), making it well-suited for applications running in harsh environments. This MOSFET has a low RDS(ON) (typical) of only 80m\u2126 (for a 15V gate drive) to minimize conduction losses … Continue reading \"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density\"","og_url":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/","og_site_name":"Market Newsdesk","article_published_time":"2023-03-30T14:17:06+00:00","og_image":[{"url":"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&sty=20230330005030r1&sid=flmnd&distro=nx&lang=en","type":"","width":"","height":""}],"author":"Newsdesk","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Newsdesk","Est. reading time":"2 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/#article","isPartOf":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/"},"author":{"name":"Newsdesk","@id":"https:\/\/www.marketnewsdesk.com\/#\/schema\/person\/482f27a394d4fda80ecb5499e519d979"},"headline":"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density","datePublished":"2023-03-30T14:17:06+00:00","mainEntityOfPage":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/"},"wordCount":400,"image":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/#primaryimage"},"thumbnailUrl":"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&sty=20230330005030r1&sid=flmnd&distro=nx&lang=en","inLanguage":"en-US"},{"@type":"WebPage","@id":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/","url":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/","name":"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density - Market Newsdesk","isPartOf":{"@id":"https:\/\/www.marketnewsdesk.com\/#website"},"primaryImageOfPage":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/#primaryimage"},"image":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/#primaryimage"},"thumbnailUrl":"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&sty=20230330005030r1&sid=flmnd&distro=nx&lang=en","datePublished":"2023-03-30T14:17:06+00:00","author":{"@id":"https:\/\/www.marketnewsdesk.com\/#\/schema\/person\/482f27a394d4fda80ecb5499e519d979"},"breadcrumb":{"@id":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/"]}]},{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/#primaryimage","url":"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&sty=20230330005030r1&sid=flmnd&distro=nx&lang=en","contentUrl":"https:\/\/cts.businesswire.com\/ct\/CT?id=bwnews&sty=20230330005030r1&sid=flmnd&distro=nx&lang=en"},{"@type":"BreadcrumbList","@id":"https:\/\/www.marketnewsdesk.com\/index.php\/industrial-grade-silicon-carbide-mosfet-from-diodes-incorporated-enables-higher-power-density\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.marketnewsdesk.com\/"},{"@type":"ListItem","position":2,"name":"Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density"}]},{"@type":"WebSite","@id":"https:\/\/www.marketnewsdesk.com\/#website","url":"https:\/\/www.marketnewsdesk.com\/","name":"Market Newsdesk","description":"Latest Business News in Real Time","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.marketnewsdesk.com\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-US"},{"@type":"Person","@id":"https:\/\/www.marketnewsdesk.com\/#\/schema\/person\/482f27a394d4fda80ecb5499e519d979","name":"Newsdesk","image":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/secure.gravatar.com\/avatar\/a0d0bd5b0f0ca12a265a459b13169dac35f33776d8501eda5e68844a366f2f46?s=96&d=mm&r=g","url":"https:\/\/secure.gravatar.com\/avatar\/a0d0bd5b0f0ca12a265a459b13169dac35f33776d8501eda5e68844a366f2f46?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/a0d0bd5b0f0ca12a265a459b13169dac35f33776d8501eda5e68844a366f2f46?s=96&d=mm&r=g","caption":"Newsdesk"},"url":"https:\/\/www.marketnewsdesk.com\/index.php\/author\/newsdesk\/"}]}},"_links":{"self":[{"href":"https:\/\/www.marketnewsdesk.com\/index.php\/wp-json\/wp\/v2\/posts\/743981","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.marketnewsdesk.com\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.marketnewsdesk.com\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.marketnewsdesk.com\/index.php\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.marketnewsdesk.com\/index.php\/wp-json\/wp\/v2\/comments?post=743981"}],"version-history":[{"count":0,"href":"https:\/\/www.marketnewsdesk.com\/index.php\/wp-json\/wp\/v2\/posts\/743981\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.marketnewsdesk.com\/index.php\/wp-json\/wp\/v2\/media?parent=743981"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.marketnewsdesk.com\/index.php\/wp-json\/wp\/v2\/categories?post=743981"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.marketnewsdesk.com\/index.php\/wp-json\/wp\/v2\/tags?post=743981"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}