{"id":1006656,"date":"2026-09-29T11:01:28","date_gmt":"2026-09-29T15:01:28","guid":{"rendered":"https:\/\/www.marketnewsdesk.com\/index.php\/everspin-demonstrates-worlds-first-cxl-connected-mram-at-snia-developer-conference-2026\/"},"modified":"2026-09-29T11:01:28","modified_gmt":"2026-09-29T15:01:28","slug":"everspin-demonstrates-worlds-first-cxl-connected-mram-at-snia-developer-conference-2026","status":"publish","type":"post","link":"https:\/\/www.marketnewsdesk.com\/index.php\/everspin-demonstrates-worlds-first-cxl-connected-mram-at-snia-developer-conference-2026\/","title":{"rendered":"Everspin Demonstrates World\u2019s First CXL-Connected MRAM at SNIA Developer Conference 2026"},"content":{"rendered":"

<\/p>\n

Everspin Demonstrates World\u2019s First CXL-Connected MRAM at SNIA Developer Conference 2026<\/b><\/p>\n

Working platform delivers memory-semantic access with writes up to 100x faster than NAND-based solid-state storage and is ready for customer workload testing<\/i><\/p>\n

CHANDLER, Ariz.–(BUSINESS WIRE<\/a>)–
\nEverspin Technologies, Inc. (NASDAQ: MRAM), a leading developer and manufacturer of MRAM persistent memory solutions, announced today the successful demonstration of the world\u2019s first Compute Express Link (CXL)-connected MRAM platform at SNIA Developer Conference (SDC) 2026. The demo added a fast persistent memory tier between DRAM and NAND storage that can reduce the time processors and accelerators spend waiting for data and help AI systems run at higher utilization.<\/p>\n

\nThe working system connects Everspin PERSYST<\/i> MRAM<\/a> to CXL-enabled platforms as persistent memory with memory semantics, combining CXL\u2019s standard high-speed connectivity with MRAM\u2019s ability to retain data without power. It creates a fast persistent buffer and cache tier with cache-line-level, nanosecond-class access and writes up to 100x faster than NAND-based solid-state storage. Data remains available through a power interruption or system restart without relying on battery-backed DRAM or having to first flush data to an SSD.<\/p>\n

\nThe demo uses a Supermicro AS-1116CS-TN server with an AMD EPYC 9355 32-core processor, an AMD Alveo U250 FPGA platform with a Wolley CXL controller and Everspin PERSYST<\/i> 1GB DDR4 MRAM UDIMMs. The configuration provides an open standards-based platform for demonstrating coherent access to persistent MRAM through CXL. It also enables memory resources to be pooled and shared across hosts, allowing persistent memory capacity to be allocated where workloads need it. For AI systems, that creates opportunities for applications such as checkpointing and persistent key-value (KV) cache.<\/p>\n

\n\u201cEverspin has been working with data center customers for 15 years, and we continue to innovate as AI changes the memory needs of systems,\u201d said Sanjeev Aggarwal, president and CEO of Everspin Technologies. \u201cCXL gives us a standard way to bring persistent MRAM to a much broader range of compute platforms. We now have a working system so customers can run their own workloads and measure the benefit for their specific applications.\u201d<\/p>\n

\nAt SDC, Everspin and Wolley demonstrated read and write access to MRAM through the CXL interface under demanding test conditions.<\/p>\n

\n\u201cWolley enables memory and storage connectivity through CXL, and this demonstration with Everspin shows how persistent MRAM can be brought into that environment with memory semantics,\u201d said Dr. Bernard Shung, CEO of Wolley. \u201cTogether, we are demonstrating a practical way to connect persistent memory through CXL and make it available to today\u2019s compute platforms.\u201d<\/p>\n

\nThe SDC demonstration builds on Everspin\u2019s work to extend MRAM into new memory architectures, including persistent caching, write buffering and metadata applications. To learn more about Everspin MRAM for data center applications, visit the Everspin Data Centers page<\/a>.<\/p>\n

About Everspin Technologies<\/b><\/p>\n

\nEverspin Technologies, Inc., is the world\u2019s leading provider of Magnetoresistive RAM (MRAM). Everspin MRAM delivers the industry\u2019s most robust, highest-performance, non-volatile memory for Industrial IoT, Data Centers, and other mission-critical applications where data persistence is paramount. Headquartered in Chandler, Arizona, Everspin provides commercially available MRAM solutions to a large and diverse customer base. For more information, visit www.everspin.com<\/a><\/p>\n

Cautionary Statement Regarding Forward-Looking Statements<\/b><\/p>\n

\nThis press release contains forward-looking statements regarding future events or results. Forward-looking statements are identified by words such as \u201cwill,\u201d \u201cexpects\u201d or similar expressions and include, but are not limited to, statements regarding Everspin\u2019s anticipated business plans and business strategy. These forward-looking statements are subject to known and unknown risks, uncertainties, assumptions, and other factors that may cause actual results or outcomes to be materially different from any future results or outcomes expressed or implied by the forward-looking statements, including, without limitation, the risks set forth under the caption \u201cRisk Factors\u201d in Everspin\u2019s Annual Report on Form 10-K for the year ended December 31, 2025 filed with the SEC on March 5, 2026, as well as in Everspin\u2019s subsequent filings with the SEC. Any forward-looking statements made by Everspin in this press release speak only as of the date on which they are made, and subsequent events may cause these expectations to change. Everspin disclaims any obligations to update or alter these forward-looking statements in the future, whether as a result of new information, future events or otherwise, except as required by law.<\/p>\n

\"\"<\/p>\n

View source version on businesswire.com: <\/span>https:\/\/www.businesswire.com\/news\/home\/20260929225389\/en\/<\/a><\/span><\/p>\n

Media Contact:
\n
<\/b>Everspin Technologies
\n
Stephanie Quinn
\n
T: 480-316-8370
\n
E: stephanie.quinn@everspin.com<\/a><\/p>\n

KEYWORDS:<\/b> United States North America Arizona<\/p>\n

INDUSTRY KEYWORDS:<\/b> Networks Internet Hardware Data Management Engineering Technology Semiconductor Manufacturing<\/p>\n

MEDIA:<\/b><\/p>\n\n\n\n\n
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Everspin Demonstrates World\u2019s First CXL-Connected MRAM at SNIA Developer Conference 2026 Working platform delivers memory-semantic access with writes up to 100x faster than NAND-based solid-state storage and is ready for customer workload testing CHANDLER, Ariz.–(BUSINESS WIRE)– Everspin Technologies, Inc. (NASDAQ: MRAM), a leading developer and manufacturer of MRAM persistent memory solutions, announced today the successful demonstration of the world\u2019s first Compute Express Link (CXL)-connected MRAM platform at SNIA Developer Conference (SDC) 2026. The demo added a fast persistent memory tier between DRAM and NAND storage that can reduce the time processors and accelerators spend waiting for data and help AI systems run at higher utilization. The working system connects Everspin PERSYST MRAM to CXL-enabled platforms as persistent memory with memory … <\/p>\n

Continue reading “Everspin Demonstrates World\u2019s First CXL-Connected MRAM at SNIA Developer Conference 2026”<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[],"tags":[],"class_list":["post-1006656","post","type-post","status-publish","format-standard","hentry"],"yoast_head":"\nEverspin Demonstrates World\u2019s First CXL-Connected MRAM at SNIA Developer Conference 2026 - Market Newsdesk<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.marketnewsdesk.com\/index.php\/everspin-demonstrates-worlds-first-cxl-connected-mram-at-snia-developer-conference-2026\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Everspin Demonstrates World\u2019s First CXL-Connected MRAM at SNIA Developer Conference 2026 - Market Newsdesk\" \/>\n<meta property=\"og:description\" content=\"Everspin Demonstrates World\u2019s First CXL-Connected MRAM at SNIA Developer Conference 2026 Working platform delivers memory-semantic access with writes up to 100x faster than NAND-based solid-state storage and is ready for customer workload testing CHANDLER, Ariz.–(BUSINESS WIRE)– Everspin Technologies, Inc. (NASDAQ: MRAM), a leading developer and manufacturer of MRAM persistent memory solutions, announced today the successful demonstration of the world\u2019s first Compute Express Link (CXL)-connected MRAM platform at SNIA Developer Conference (SDC) 2026. The demo added a fast persistent memory tier between DRAM and NAND storage that can reduce the time processors and accelerators spend waiting for data and help AI systems run at higher utilization. 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